FCU2250N80Z
Laharana vokatra mpanamboatra:

FCU2250N80Z

Product Overview

Mpampanofa:

Fairchild Semiconductor

Laharana Zava-maneno:

FCU2250N80Z-DG

Famaritana:

MOSFET N-CH 800V 2.6A I-PAK
Famaritana An-tsipirihany:
N-Channel 800 V 2.6A (Tc) 39W (Tc) Through Hole I-PAK

Fanisana:

94795 Pcs Vaovao Tena Misy ao am-pitehirizana
12947154
Mangataka tolotra
Fahafahana
Farafahakeliny 1
num_del num_add
*
*
*
*
44bc
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso

FCU2250N80Z Fepetra Ara-teknika

Sokajy
FETs, MOSFETs, FET tokana, MOSFET
Mpampanofa
Fonosana
Bulk
Andian-dahatsoratra
SuperFET® II
Sata momba ny vokatra
Active
FET Type
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Mitete ny loharano malefaka (Vdss)
800 V
Fitohizan'ny hafatra: @ 25 ° C
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.25Ohm @ 1.3A, 10V
Njakatiana @ Id
4.5V @ 260µA
Aloavy @ vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
585 pF @ 100 V
FET Feature
-
Fanapahana herinaratra (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
fitomboan'ny karazana
Through Hole
Mpamatsy fitaovana fonosana
I-PAK
Fonosana / Case
TO-251-3 Short Leads, IPak, TO-251AA

Takelaka sy Antontan-taratasy

Datasheets
FCU2250N80Z Datasheet

Fanazavana fanampiny

Anarana hafa
2156-FCU2250N80Z
FAIFSCFCU2250N80Z
Standard fonosana
385

Fandaharana ara-tontolo iainana & Fanondranana

ECCN
EAR99
HTSUS
8542.39.0001
Fanamarinana DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Vokatra mifandraika
fairchild-semiconductor

FDB8896

POWER FIELD-EFFECT TRANSISTOR, 8

fairchild-semiconductor

FQPF19N10

MOSFET N-CH 100V 13.6A TO220F

nexperia

OP540/BD/C3,027

OP540/BD - CUSTOM MOSFET

international-rectifier

IRF8304MTRPBF

IRF8304 - 12V-300V N-CHANNEL POW