Laharana vokatra mpanamboatra:
IMYH200R100M1HXKSA1
Product Overview
Mpampanofa:
Infineon Technologies
Laharana Zava-maneno:
IMYH200R100M1HXKSA1-DG
Famaritana:
SIC DISCRETE
Famaritana An-tsipirihany:
N-Channel 2000 V 26A (Tc) 217W (Tc) Through Hole PG-TO247-4-U04
Fanisana:
13002564
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
FdKZ
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
IMYH200R100M1HXKSA1 Fepetra Ara-teknika
Sokajy
FETs, MOSFETs, FET tokana, MOSFET
Mpampanofa
Infineon Technologies
Fonosana
Tube
Andian-dahatsoratra
CoolSiC™
Sata momba ny vokatra
Active
FET Type
N-Channel
Teknolojia
SiC (Silicon Carbide Junction Transistor)
Mitete ny loharano malefaka (Vdss)
2000 V
Fitohizan'ny hafatra: @ 25 ° C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
131mOhm @ 10A, 18V
Njakatiana @ Id
5.5V @ 6mA
Aloavy @ vgs
55 nC @ 18 V
Vgs (Max)
+20V, -7V
FET Feature
-
Fanapahana herinaratra (Max)
217W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
fitomboan'ny karazana
Through Hole
Mpamatsy fitaovana fonosana
PG-TO247-4-U04
Fonosana / Case
TO-247-4
Base Product Number
IMYH200
Fanazavana fanampiny
Anarana hafa
SP005427376
448-IMYH200R100M1HXKSA1
Standard fonosana
240
Fandaharana ara-tontolo iainana & Fanondranana
RoHS Status
ROHS3 Compliant
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
TONGA SATA
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Fanamarinana DIGI
Vokatra mifandraika
DMTH10H032LFVW-7
MOSFET BVDSS: 61V~100V PowerDI33
DMN2009UFDF-7
MOSFET BVDSS: 8V~24V U-DFN2020-6
G75P04D5
MOSFET P-CH 40V 70A DFN5*6-8L
