Laharana vokatra mpanamboatra:
FQI4N80TU
Product Overview
Mpampanofa:
onsemi
Laharana Zava-maneno:
FQI4N80TU-DG
Famaritana:
MOSFET N-CH 800V 3.9A I2PAK
Famaritana An-tsipirihany:
N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole TO-262 (I2PAK)
Fanisana:
12847848
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
mLos
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
FQI4N80TU Fepetra Ara-teknika
Sokajy
FETs, MOSFETs, FET tokana, MOSFET
Mpampanofa
onsemi
Fonosana
-
Andian-dahatsoratra
QFET®
Sata momba ny vokatra
Obsolete
FET Type
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Mitete ny loharano malefaka (Vdss)
800 V
Fitohizan'ny hafatra: @ 25 ° C
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Njakatiana @ Id
5V @ 250µA
Aloavy @ vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Fanapahana herinaratra (Max)
3.13W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
fitomboan'ny karazana
Through Hole
Mpamatsy fitaovana fonosana
TO-262 (I2PAK)
Fonosana / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4N80
Takelaka sy Antontan-taratasy
Datasheets
Fanazavana fanampiny
Standard fonosana
1,000
Fandaharana ara-tontolo iainana & Fanondranana
RoHS Status
ROHS3 Compliant
Hamandoana fahatsapana haavon'ny (MSL)
Not Applicable
TONGA SATA
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Maodely hafa
ISAN'NY PART
IRFBE30LPBF
mpamokatra
Vishay Siliconix
ISAN'NY NISY
990
ISAN'NY PART
IRFBE30LPBF-DG
VIDIN'NY UNIT
1.08
Karazana fanolo
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