Laharana vokatra mpanamboatra:
SMUN5312DW1T1G
Product Overview
Mpampanofa:
onsemi
Laharana Zava-maneno:
SMUN5312DW1T1G-DG
Famaritana:
TRANS NPN/PNP PREBIAS SOT363
Famaritana An-tsipirihany:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
Fanisana:
1553 Pcs Vaovao Tena Misy ao am-pitehirizana
12847140
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
SMUN5312DW1T1G Fepetra Ara-teknika
Sokajy
Bipolaire (BJT), Vato Bipolar Transistor, Pre-Biased
Mpampanofa
onsemi
Fonosana
Tape & Reel (TR)
Andian-dahatsoratra
-
Sata momba ny vokatra
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Ny mpanangona amin'izao fotoana izao (Ic) (Max)
100mA
Voltage - mpanangona Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
22kOhms
Ny tombony amin'izao fotoana izao (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Accueil @ Bianco @ Bianco
250mV @ 300µA, 10mA
Fanapahana amin'izao fotoana izao - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
187mW
fitomboan'ny karazana
Surface Mount
Fonosana / Case
6-TSSOP, SC-88, SOT-363
Mpamatsy fitaovana fonosana
SC-88/SC70-6/SOT-363
Base Product Number
SMUN5312
Takelaka sy Antontan-taratasy
Fanazavana fanampiny
Anarana hafa
SMUN5312DW1T1GOSTR
SMUN5312DW1T1GOSCT
2832-SMUN5312DW1T1GTR
SMUN5312DW1T1G-DG
SMUN5312DW1T1GOSDKR
Standard fonosana
3,000
Fandaharana ara-tontolo iainana & Fanondranana
RoHS Status
ROHS3 Compliant
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
TONGA SATA
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Maodely hafa
ISAN'NY PART
RN4983,LF(CT
mpamokatra
Toshiba Semiconductor and Storage
ISAN'NY NISY
2980
ISAN'NY PART
RN4983,LF(CT-DG
VIDIN'NY UNIT
0.03
Karazana fanolo
Similar
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UMD2NTR
mpamokatra
Rohm Semiconductor
ISAN'NY NISY
5644
ISAN'NY PART
UMD2NTR-DG
VIDIN'NY UNIT
0.07
Karazana fanolo
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