R6061YNZ4C13
Laharana vokatra mpanamboatra:

R6061YNZ4C13

Product Overview

Mpampanofa:

Rohm Semiconductor

Laharana Zava-maneno:

R6061YNZ4C13-DG

Famaritana:

NCH 600V 61A, TO-247, POWER MOSF
Famaritana An-tsipirihany:
N-Channel 600 V 61A (Tc) 568W (Tc) Through Hole TO-247

Fanisana:

596 Pcs Vaovao Tena Misy ao am-pitehirizana
13005798
Mangataka tolotra
Fahafahana
Farafahakeliny 1
num_del num_add
*
*
*
*
pEBw
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso

R6061YNZ4C13 Fepetra Ara-teknika

Sokajy
FETs, MOSFETs, FET tokana, MOSFET
Mpampanofa
ROHM Semiconductor
Fonosana
Tube
Andian-dahatsoratra
-
Sata momba ny vokatra
Active
FET Type
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Mitete ny loharano malefaka (Vdss)
600 V
Fitohizan'ny hafatra: @ 25 ° C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Rds On (Max) @ Id, Vgs
60mOhm @ 13A, 12V
Njakatiana @ Id
6V @ 3.5mA
Aloavy @ vgs
76 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 100 V
FET Feature
-
Fanapahana herinaratra (Max)
568W (Tc)
Operating Temperature
150°C (TJ)
fitomboan'ny karazana
Through Hole
Mpamatsy fitaovana fonosana
TO-247
Fonosana / Case
TO-247-3
Base Product Number
R6061

Takelaka sy Antontan-taratasy

Datasheets

Fanazavana fanampiny

Anarana hafa
846-R6061YNZ4C13
Standard fonosana
30

Fandaharana ara-tontolo iainana & Fanondranana

Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Fanamarinana DIGI
Vokatra mifandraika
infineon-technologies

IAUCN04S7N004ATMA1

MOSFET_(20V 40V)

toshiba-semiconductor-and-storage

TPH9R00CQ5,LQ

150V U-MOS X-H SOP-ADVANCE(N) 9M

nexperia

GAN140-650EBEZ

650 V, 140 MOHM GALLIUM NITRIDE

toshiba-semiconductor-and-storage

XPJR6604PB,LXHQ

40V; UMOS9; 0.66MOHM; S-TOGL