Laharana vokatra mpanamboatra:
RN1109(T5L,F,T)
Product Overview
Mpampanofa:
Toshiba Semiconductor and Storage
Laharana Zava-maneno:
RN1109(T5L,F,T)-DG
Famaritana:
TRANS PREBIAS NPN 50V 0.1A SSM
Famaritana An-tsipirihany:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Fanisana:
12890864
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
uioW
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
RN1109(T5L,F,T) Fepetra Ara-teknika
Sokajy
Bipolaire (BJT), Transistors Bipolar Pre-Biased Tokan-tokana
Mpampanofa
Toshiba Electronic Devices and Storage Corporation
Fonosana
-
Andian-dahatsoratra
-
Sata momba ny vokatra
Obsolete
Transistor Type
NPN - Pre-Biased
Ny mpanangona amin'izao fotoana izao (Ic) (Max)
100 mA
Voltage - mpanangona Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
22 kOhms
Ny tombony amin'izao fotoana izao (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Accueil @ Bianco @ Bianco
300mV @ 250µA, 5mA
Fanapahana amin'izao fotoana izao - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
100 mW
fitomboan'ny karazana
Surface Mount
Fonosana / Case
SC-75, SOT-416
Mpamatsy fitaovana fonosana
SSM
Base Product Number
RN1109
Fanazavana fanampiny
Anarana hafa
RN1109T5LFT
RN1109(T5LFT)TR
RN1109(T5LFT)DKR
RN1109(T5LFT)CT
Standard fonosana
3,000
Fandaharana ara-tontolo iainana & Fanondranana
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Maodely hafa
ISAN'NY PART
DDTC144WE-7-F
mpamokatra
Diodes Incorporated
ISAN'NY NISY
0
ISAN'NY PART
DDTC144WE-7-F-DG
VIDIN'NY UNIT
0.03
Karazana fanolo
Similar
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Vokatra mifandraika
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TRANS PREBIAS PNP 50V 0.08A CST3
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TRANS PREBIAS NPN 50V 0.1A SSM
