Laharana vokatra mpanamboatra:
RN1610(TE85L,F)
Product Overview
Mpampanofa:
Toshiba Semiconductor and Storage
Laharana Zava-maneno:
RN1610(TE85L,F)-DG
Famaritana:
TRANS 2NPN PREBIAS 0.3W SM6
Famaritana An-tsipirihany:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6
Fanisana:
1250 Pcs Vaovao Tena Misy ao am-pitehirizana
12891318
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
RN1610(TE85L,F) Fepetra Ara-teknika
Sokajy
Bipolaire (BJT), Vato Bipolar Transistor, Pre-Biased
Mpampanofa
Toshiba Electronic Devices and Storage Corporation
Fonosana
Tape & Reel (TR)
Andian-dahatsoratra
-
Sata momba ny vokatra
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Ny mpanangona amin'izao fotoana izao (Ic) (Max)
100mA
Voltage - mpanangona Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
-
Ny tombony amin'izao fotoana izao (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Accueil @ Bianco @ Bianco
300mV @ 250µA, 5mA
Fanapahana amin'izao fotoana izao - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
300mW
fitomboan'ny karazana
Surface Mount
Fonosana / Case
SC-74, SOT-457
Mpamatsy fitaovana fonosana
SM6
Base Product Number
RN1610
Takelaka sy Antontan-taratasy
Datasheets
Fanazavana fanampiny
Anarana hafa
RN1610(TE85LF)CT
RN1610(TE85LF)DKR
RN1610(TE85LF)TR
Standard fonosana
3,000
Fandaharana ara-tontolo iainana & Fanondranana
RoHS Status
RoHS Compliant
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Maodely hafa
Fanamarinana DIGI
Vokatra mifandraika
RN1709,LF
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
RN1962FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6
RN1503(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SMV