RN2602(TE85L,F)
Laharana vokatra mpanamboatra:

RN2602(TE85L,F)

Product Overview

Mpampanofa:

Toshiba Semiconductor and Storage

Laharana Zava-maneno:

RN2602(TE85L,F)-DG

Famaritana:

TRANS 2PNP PREBIAS 0.3W SM6
Famaritana An-tsipirihany:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6

Fanisana:

RFQ An-tserasera
12889496
Mangataka tolotra
Fahafahana
Farafahakeliny 1
num_del num_add
*
*
*
*
SdVK
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso

RN2602(TE85L,F) Fepetra Ara-teknika

Sokajy
Bipolaire (BJT), Vato Bipolar Transistor, Pre-Biased
Mpampanofa
Toshiba Electronic Devices and Storage Corporation
Fonosana
Tape & Reel (TR)
Andian-dahatsoratra
-
Sata momba ny vokatra
Active
Transistor Type
2 PNP - Pre-Biased (Dual)
Ny mpanangona amin'izao fotoana izao (Ic) (Max)
100mA
Voltage - mpanangona Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
Ny tombony amin'izao fotoana izao (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Accueil @ Bianco @ Bianco
300mV @ 250µA, 5mA
Fanapahana amin'izao fotoana izao - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200MHz
Power - Max
300mW
fitomboan'ny karazana
Surface Mount
Fonosana / Case
SC-74, SOT-457
Mpamatsy fitaovana fonosana
SM6
Base Product Number
RN2602

Fanazavana fanampiny

Anarana hafa
RN2602(TE85LF)DKR
RN2602(TE85LF)CT
RN2602(TE85LF)TR
Standard fonosana
3,000

Fandaharana ara-tontolo iainana & Fanondranana

RoHS Status
RoHS Compliant
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Maodely hafa

ISAN'NY PART
IMB11AT110
mpamokatra
Rohm Semiconductor
ISAN'NY NISY
4150
ISAN'NY PART
IMB11AT110-DG
VIDIN'NY UNIT
0.06
Karazana fanolo
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ISAN'NY NISY
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ISAN'NY PART
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VIDIN'NY UNIT
0.02
Karazana fanolo
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