Laharana vokatra mpanamboatra:
RN2962FE(TE85L,F)
Product Overview
Mpampanofa:
Toshiba Semiconductor and Storage
Laharana Zava-maneno:
RN2962FE(TE85L,F)-DG
Famaritana:
TRANS 2PNP PREBIAS 0.1W ES6
Famaritana An-tsipirihany:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Fanisana:
12889155
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
YMx8
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
RN2962FE(TE85L,F) Fepetra Ara-teknika
Sokajy
Bipolaire (BJT), Vato Bipolar Transistor, Pre-Biased
Mpampanofa
Toshiba Electronic Devices and Storage Corporation
Fonosana
-
Andian-dahatsoratra
-
Sata momba ny vokatra
Obsolete
Transistor Type
2 PNP - Pre-Biased (Dual)
Ny mpanangona amin'izao fotoana izao (Ic) (Max)
100mA
Voltage - mpanangona Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
1kOhms
Ny tombony amin'izao fotoana izao (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Accueil @ Bianco @ Bianco
300mV @ 250µA, 5mA
Fanapahana amin'izao fotoana izao - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200MHz
Power - Max
100mW
fitomboan'ny karazana
Surface Mount
Fonosana / Case
SOT-563, SOT-666
Mpamatsy fitaovana fonosana
ES6
Base Product Number
RN2962
Fanazavana fanampiny
Anarana hafa
RN2962FE(TE85LF)TR
RN2962FE(TE85LF)DKR
RN2962FE(TE85LF)CT
Standard fonosana
4,000
Fandaharana ara-tontolo iainana & Fanondranana
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Maodely hafa
ISAN'NY PART
PEMB11,115
mpamokatra
Nexperia USA Inc.
ISAN'NY NISY
8520
ISAN'NY PART
PEMB11,115-DG
VIDIN'NY UNIT
0.07
Karazana fanolo
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