Laharana vokatra mpanamboatra:
TPCF8B01(TE85L,F,M
Product Overview
Mpampanofa:
Toshiba Semiconductor and Storage
Laharana Zava-maneno:
TPCF8B01(TE85L,F,M-DG
Famaritana:
MOSFET P-CH 20V 2.7A VS-8
Famaritana An-tsipirihany:
P-Channel 20 V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)
Fanisana:
12890298
Mangataka tolotra
Fahafahana
Farafahakeliny 1
Farafahakeliny 1
L9hS
(*) dia ilaina
Hiverina aminao ao anatin'ny 24 ora izahay
Hiverina aminao ao anatin'ny 24 ora izahay
Alefaso
TPCF8B01(TE85L,F,M Fepetra Ara-teknika
Sokajy
FETs, MOSFETs, FET tokana, MOSFET
Mpampanofa
Toshiba Electronic Devices and Storage Corporation
Fonosana
-
Andian-dahatsoratra
U-MOSIII
Sata momba ny vokatra
Obsolete
FET Type
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Mitete ny loharano malefaka (Vdss)
20 V
Fitohizan'ny hafatra: @ 25 ° C
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
110mOhm @ 1.4A, 4.5V
Njakatiana @ Id
1.2V @ 200µA
Aloavy @ vgs
6 nC @ 5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Fanapahana herinaratra (Max)
330mW (Ta)
Operating Temperature
150°C (TJ)
fitomboan'ny karazana
Surface Mount
Mpamatsy fitaovana fonosana
VS-8 (2.9x1.5)
Fonosana / Case
8-SMD, Flat Lead
Base Product Number
TPCF8B01
Fanazavana fanampiny
Anarana hafa
TPCF8B01(TE85LFMDRK
TPCF8B01FDKR-DG
TPCF8B01(TE85L,F,M-DG
TPCF8B01FDKR
TPCF8B01(TE85LFMCT
TPCF8B01(TE85L,F)
TPCF8B01FTR
TPCF8B01(TE85LFMDRK-DG
TPCF8B01(TE85LFMDKR
TPCF8B01TE85LFM
TPCF8B01(TE85L,F,MINACTIVE
TPCF8B01(TE85LFMTR
TPCF8B01(TE85L,F)-DG
TPCF8B01FCT
TPCF8B01FTR-DG
TPCF8B01FCT-DG
Standard fonosana
4,000
Fandaharana ara-tontolo iainana & Fanondranana
Hamandoana fahatsapana haavon'ny (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Fanamarinana DIGI
Vokatra mifandraika
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